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Samsung Electronics unveils next-gen AI memory technology

Created at 4 Aug · 7:34 PM1 source↑ Market-relevant
IN SHORT

Samsung Electronics introduced its V10 Bonding V-NAND, or BV-NAND, prototype, featuring over 400 layers and a new wafer-bonding architecture. This technology aims to increase storage density and boost performance to meet the growing demand from AI systems.

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Key Numbers

400+layers in BV-NAND prototype
58%increase in memory density from V9 NAND
10xpotential memory density increase over HBM5
60% to 70%potential long-term customer agreements for memory sales

Who's Involved

Samsung Electronics
World's largest memory chip manufacturer launching new AI memory technology
Heekyong Yang
Reuters reporter
David Goodman
Editor
Citi analysts
Commented on memory chip supply chain inventories
Samsung Electronics unveils next-gen AI memory technology

↳ Why This Matters

Samsung's new AI memory technology aims to solidify its leading position in the semiconductor market by catering to the rapidly growing demand for high-performance, high-capacity storage solutions essential for advanced AI applications.

Key facts

  • Samsung Electronics has launched a new generation of AI memory technology, the BV-NAND prototype.
  • The BV-NAND features over 400 layers and a new wafer-bonding architecture to enhance storage density and performance.
  • This technology aims to meet the increasing demand for high-capacity and power-efficient storage driven by AI workloads.
  • Samsung's BV-NAND offers a 58% increase in memory density compared to its previous V9 NAND.
  • The company also presented concepts for zHBM and zNAND-O architecture for next-generation 3D memory.

Samsung Electronics has introduced a new generation of artificial intelligence memory technology, the V10 Bonding V-NAND, or BV-NAND, prototype. The chip, unveiled at the Future of Memory and Storage (FMS) conference in Santa Clara, California, features over 400 layers and a novel wafer-bonding architecture designed to increase storage density and boost performance.

This advancement is aimed at addressing the expanding demand for high-capacity NAND memory driven by AI workloads, which now extend beyond training large language models to generating user query responses. Samsung stated that its BV-NAND technology increases memory density by approximately 58% compared to its previous V9 NAND, while also improving read, write, and input/output performance for AI systems requiring greater capacity and power efficiency.

The company also showcased conceptual models for zHBM and zNAND-O architecture, outlining a vision for next-generation 3D memory that stacks cells vertically. Unlike conventional high-bandwidth memory, Samsung's zHBM stacks memory directly above AI accelerators to shorten data travel distances, thereby increasing bandwidth and energy efficiency. Samsung claims its wafer-bonding technology could achieve more than ten times the memory density of conventional HBM5 memory, while tripling energy efficiency and reducing thermal resistance by over half.

Despite some investor concerns about long-term memory chip demand due to weakening smartphone sales in China, analysts highlight exceptionally strong AI demand. Samsung recently indicated that long-term customer agreements could eventually constitute 60% to 70% of its memory sales. Citi analysts noted that inventories across both DRAM and NAND supply chains remain below historical levels, even with concerns about softening end-market demand.

Frequently asked questions

Samsung's new AI memory technology is called V10 Bonding V-NAND, or BV-NAND.

The BV-NAND prototype features over 400 layers and a new wafer-bonding architecture designed to increase storage density and boost performance.

Samsung stated that its BV-NAND technology increases memory density by about 58% from its previous V9 NAND and improves read, write, and input/output performance.

Samsung's zHBM stacks memory vertically above AI accelerators to reduce data travel distance, increasing bandwidth and energy efficiency, potentially offering over 10 times the density of conventional HBM5.

What Happens Next

01Samsung will continue to develop and commercialize its next-generation AI memory technologies.

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How It Developed

Samsung Electronics introduced its V10 Bonding V-NAND, or BV-NAND, prototype.
The new chip features over 400 layers and a new wafer-bonding architecture.
Samsung also showed concept models of zHBM and zNAND-O architecture.
The company stated its wafer-bonding technology could enable more than 10 times the memory density of conventional HBM5 memory.

Sources

T1
Samsung Electronics launches next-generation AI memory technologyReuters

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